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hal710 hall-effect sensor with direction detection edition feb. 20, 2001 6251-478-1ai advance information micr onas m i c r o n a s
hal710 advance information 2 micronas contents page section title 3 1. introduction 3 1.1. features 3 1.2. applications 4 1.3. marking code 4 1.3.1. special marking of prototype parts 4 1.4. operating junction temperature range 4 1.5. hall sensor package codes 4 1.6. solderability 5 2. functional description 7 3. specifications 7 3.1. outline dimensions 7 3.2. dimensions of sensitive areas 7 3.3. positions of sensitive areas 8 3.4. absolute maximum ratings 8 3.5. recommended operating conditions 9 3.6. electrical characteristics 10 3.7. magnetic characteristics 10 3.7.1. magnetic thresholds 10 3.7.2. matching b s1 and b s2 10 3.7.3. hysteresis matching 11 4. application notes 11 4.1. ambient temperature 11 4.2. extended operating conditions 11 4.3. signal delay 11 4.4. test mode activation 11 4.5. start-up behavior 12 4.6. emc and esd 12 5. data sheet history
advance information hal710 micronas 3 hall-effect sensor with direction detection 1. introduction the hal 710 is a monolithic integrated hall-effect sen- sor manufactured in cmos technology with two inde- pendent hall plates s1 and s2 spaced 2.35 mm apart. the device has two open-drain outputs: the ?count output? operates like a single latched hall switch according to the magnetic field present at hall plate s1 (see fig. 3?3). the ?direction output? indicates the direction of a linear or rotating movement of magnetic objects. in combination with an active target providing a sequence of alternating magnetic north and south poles, the sensor forms a system generating the sig- nals required to control position, speed, and direction of the target movement. the internal circuitry evaluates the direction of the movement and updates the ?direction output? at every edge of the ?count signal? (rising and falling). the direction output is high if the target moves from hall plate s1 to hall plate s2. it is low if the target first passes plate s2 and later plate s1. the state of the direction output only changes at a rising or falling edge of the count output. the design ensures a setup time for the direction out- put with respect to the corresponding count signal edge of 1/2 clock periods (1 s minimum). the device includes temperature compensation and active offset compensation. these features provide excellent stability and matching of the switching points in the presence of mechanical stress over the whole temperature and supply voltage range. this is required by systems determining the direction from the compar- ison of two transducer signals. the sensor is designed for industrial and automotive applications and operates with supply voltages from 3.8 v to 24 v in the ambient temperature range from ? 40 c up to 125 c. the hal 710 is available in the smd package sot-89b. 1.1. features ? generation of ?count signals? and ?direction signals? ? delay of the ?count signals? with respect to the ?direction signal? of 1 s minimum ? switching type latching ? low sensitivity ?typical b on : 14.9 mt at room temperature ?typical b off : ? 14.9 mt at room temperature ? temperature coefficient of ? 2000 ppm/k in all mag- netic characteristics ? switching offset compensation at typically 150 khz ? operation from 3.8 v to 24 v supply voltage ? operation with static magnetic fields and dynamic magnetic fields up to 10 khz ? overvoltage protection at all pins ? reverse-voltage protection at v dd -pin ? robustness of magnetic characteristics against mechanical stress ? short-circuit protected open-drain outputs by ther- mal shut down ? constant switching points over a wide supply voltage range ? emc corresponding to din 40839 1.2. applications the hal 710 is the optimal sensor for position-control applications with direction detection and alternating magnetic signals such as: ? multipole magnet applications, ? rotating speed and direction measurement, position tracking (active targets), and ? window lifters.
hal710 advance information 4 micronas 1.3. marking code all hall sensors have a marking on the package sur- face (branded side). this marking includes the name of the sensor and the temperature range. 1.3.1. special marking of prototype parts prototype parts are coded with an underscore beneath the temperature range letter on each ic. they may be used for lab experiments and design-ins but are not intended to be used for qualification test or as produc- tion parts. 1.4. operating junction temperature range the hall sensors from micronas are specified to the chip temperature (junction temperature t j ). k: t j = ? 40 c to +140 c e: t j = ? 40 c to +100 c the relationship between ambient temperature (t a ) and junction temperature is explained in section 4.1. on page 11. 1.5. hall sensor package codes hall sensors are available in a wide variety of packag- ing quantities. for more detailed information, please refer to the brochure: ? ordering codes for hall sen- sors ? . 1.6. solderability all packages: according to iec68-2-58 during soldering, reflow processing and manual reworking, a component body temperature of 260 c should not be exceeded. components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environ- ments as extreme as 40 c and 90% relative humidity. fig. 1?1: pin configuration type temperature range k e hal710 710k 710e halxxxpa-t temperature range: k, or e package: sf for sot-89b type: 710 example: hal 710sf-k type: 710 package: sot-89b temperature range: t j = ? 40 c to +140 c 1 v dd 4gnd 3 count output 2 direction output
advance information hal710 micronas 5 2. functional description the hal 710 is a monolithic integrated circuit with two independent subblocks consisting each of a hall plate and the corresponding comparator. each subblock independently switches the comparator output in response to the magnetic field at the location of the corresponding sensitive area. if a magnetic field with flux lines perpendicular to the sensitive area is present, the biased hall plate generates a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the comparator. the subblocks are designed to have closely matched switching points. the temperature-dependent bias ? common to both subblocks ? increases the supply voltage of the hall plates and adjusts the switching points to the decreas- ing induction of magnets at higher temperatures. if the magnetic field exceeds the threshold levels, the com- parator switches to the appropriate state. the built-in hysteresis prevents oscillations of the outputs. in order to achieve good matching of the switching points of both subblocks, the magnetic offset caused by mechanical stress is compensated for by use of ? switching offset compensation techniques ? . therefore, an internal oscillator provides a two-phase clock to both subblocks. for each subblock the hall voltage is sampled at the end of the first phase. at the end of the second phase, both sampled and actual hall voltages are averaged and compared with the actual switching point. the output of comparator 1 (connected to s1) directly controls the ? count output ? . the outputs of both com- parators enter the ? direction detection block ? control- ling the state of the ? direction output ? . the ? direction output ? is ? high ? if the edge at the output of comparator 1 precedes that at comparator 2. in the opposite case, ? direction output ? is ? low ? . the previous state of the ? direction output ? is maintained between edges of the ? count output ? and in case the edges at comparator 1 and comparator 2 occur in the same clock period. shunt protection devices clamp voltage peaks at the output pins and v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to ? 15 v. no external reverse protection diode is needed at the v dd -pin for reverse voltages ranging from 0 v to ? 15 v. fig. 2 ? 1: timing diagram i dd t direction t v oh v ol count t v oh v ol b s2 t b s2on clock t 1/f osc t f output output b s1 bs1 on i dd
hal710 advance information 6 micronas fig. 2 ? 2: hal 710 block diagram reverse voltage and overvoltage protection temperature dependent bias hysteresis control hall plate 1 switch comparator 1 v dd hall plate 2 switch comparator clock output 3 count output direction output 2 direction output short circuit and overvoltage protection test-mode control s1 s2 detection gnd 4
advance information hal710 micronas 7 3. specifications 3.1. outline dimensions fig. 3 ? 1: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm 3.2. dimensions of sensitive areas dimensions: 0.25 mm 0.12 mm 3.3. positions of sensitive areas note: for all package diagrams, a mechanical toler- ance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. sot-89b x 1 + x 2 (2.35 0.001) mm x 1 = x 2 1.175 mm nominal y 0.975 mm nominal sensitive area s 1 min. 0.25 x 1 x 2 2.55 0.4 0.4 0.4 1.5 3.0 0.06 0.04 4 0.2 0.15 branded side spgs0022-5-b4/1e top view y 123 4 0.3 1.15 ? 0.2 sensitive area s 2 ? 0.2 4.55 1.7
hal710 advance information 8 micronas 3.4. absolute maximum ratings stresses beyond those listed in the ? absolute maximum ratings ? may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the ? recommended operating conditions/characteristics ? of this specification is not implied. exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 ? 15 28 1) v -v p supply voltage 1 ? 24 2) 28 1) v ? i dd reverse supply current 1 ? 50 1) ma i ddz supply current through protection device 1 ? 100 3) 100 3) ma v o output voltage 2, 3 ? 0.3 28 1) v i o continuous output on current 2, 3 ? 20 1) ma i omax peak output on current 2, 3 ? 150 3) ma i oz output current through protection device 3 ? 200 3) 200 3) ma t s storage temperature range ? 65 150 5) c t j junction temperature range ? 40 ? 40 170 4) 150 c c 1) as long, as t jmax is not exceeded 2) with a 220- ? series resistance at pin 1 corresponding to test circuit 1 3) t < 2 ms 4) t < 1000 h 5) components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 c and 90% relative humidity. symbol parameter pin no. min. typ. max. unit v dd supply voltage 1 3.8 ? 24 v i o continuous output current 3 0 ? 10 ma v o output voltage (output switch off) 30 ? 24 v
advance information hal710 micronas 9 3.6. electrical characteristics at t j = ? 40 c to +140 c, v dd = 3.8 v to 24 v, as not otherwise specified in conditions. typical characteristics for t j = 25 c and v dd = 5 v. fig. 3 ? 2: recommended pad size for sot-89b dimensions in mm symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 2 5.5 9 ma t j = 25 c i dd supply current over temperature range 1710ma v ddz overvoltage protection at supply 1 28.5 32 v i dd = 25 ma, t j = 25 c, t = 20 ms v oz overvoltage protection at output 2,3 2832v i oh = 25 ma, t j = 25 c, t = 20 ms v ol output voltage 2,3 130 280 mv i ol = 10 ma, t j = 25 c v ol output voltage over temperature range 2,3 130 400 mv i ol = 10 ma, i oh output leakage current 2,3 0.06 0.1 a output switched off, t j = 25 c, v oh = 3.8 v to 24 v i oh output leakage current over temperature range 2,3 ? 10 a output switched off, t j 140 c, v oh = 3.8 v to 24 v f osc internal sampling frequency ? 130 150 ? khz t j = 25 c f osc internal sampling frequency over temperature range ? 100 150 ? khz t en (o) enable time of output after setting of v dd 50 100 sv dd = 12 v, b>b on + 2 mt or b hal710 advance information 10 micronas 3.7. magnetic characteristics fig. 3 ? 3: definition of magnetic switching points for the hal710 positive flux density values refer to magnetic south pole at the branded side of the package. 3.7.1. magnetic thresholds (quasistationary: db/dt<0.5 mt/ms) at t j = ? 40 c to +140 c, v dd = 3.8 v to 24 v, as not otherwise specified typical characteristics for t j = 25 c and v dd = 5 v 3.7.2. matching b s1 and b s2 (quasistationary: db/dt<0.5 mt/ms) at t j = ? 40 c to +140 c, v dd = 3.8 v to 24 v, as not otherwise specified typical characteristics for t j = 25 c and v dd = 5 v 3.7.3. hysteresis matching (quasistationary: db/dt<0.5 mt/ms) at t j = ? 40 c to +140 c, v dd = 3.8 v to 24 v, as not otherwise specified typical characteristics for t j = 25 c and v dd = 5 v para- meter on point b s1on, b s2on off point b s1off, , b s2off unit t j min. typ. max. min. typ. max. ? 40 c 12.5 16.3 20 ? 20 ? 16.3 ? 12.5 mt 25 c 10.7 14.9 19.1 ? 19.1 ? 14.9 ? 10.7 mt 100 c tbd tbd tbd tbd tbd tbd mt 140 c 6.0 10.9 16.0 ? 16.0 ? 10.9 ? 6.0 mt b off b on 0 v ol v o output voltage b b hys para- meter b s1on ? b s2on b s1off ? b s2off unit t j min. typ max. min. typ max. ? 40 c ? 7.5 0 7.5 ? 7.5 0 7.5 mt 25 c ? 7.5 0 7.5 ? 7.5 0 7.5 mt 100 c ? 7.5 0 7.5 ? 7.5 0 7.5 mt 140 c ? 7.5 0 7.5 ? 7.5 0 7.5 mt parameter (b s1on ? b s1off ) / (b s2on ? b s2off ) unit t j min. typ. max. ? 40 c 0.85 1.0 1.2 ? 25 c 0.85 1.0 1.2 ? 100 c 0.85 1.0 1.2 ? 140 c 0.85 1.0 1.2 ?
advance information hal710 micronas 11 4. application notes 4.1. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient temperature t a ). t j = t a + ? t at static conditions, the following equation is valid: ? t = i dd * v dd * r th for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the appli- cation. for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: t amax = t jmax ? ? t 4.2. extended operating conditions all sensors fulfil the electrical and magnetic character- istics when operated within the recommended oper- ating conditions (see page 8) supply voltage below 3.8 v typically, the sensors operate with supply voltages above 3 v, however, below 3.8 v some characteristics may be outside the specification. note: the functionality of the sensor below 3.8 v is not tested. for special test conditions, please contact mic- ronas. 4.3. signal delay the extra circuitry required for the direction detection increases the latency of the ? count and direction sig- nal ? compared to a simple switch (e.g. hal 525). this extra delay corresponds to 0.5 and 1 clock period for the ? direction signal ? and ? count signal ? respectively. 4.4. test mode activation in order to obtain the normal operation as described above, two external pull-up resistors with appropriate values are required to connect each output to an exter- nal supply, such that the potential at the open-drain output rises to at least 3 v in less than 10 s after hav- ing turned off the corresponding pull-down transistor or after having applied v dd . if the ? direction output ? is pulled low externally (the potential does not rise after the internal pull-down tran- sistor has been turned off), the device enters manufac- turer test mode. direction detection is not functional in manufacturer test mode. the device returns to ? normal operation ? as soon as the ? count output ? goes high. please note, that the presence of a manufacturer test mode requires appropriate measures to prevent acci- dental activation (e.g. in response to emc events). 4.5. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the electrical characteristics (see page 9) during the initialization time, the output states are not defined and the outputs can toggle. after t en(o) both outputs will be either high or low for a stable magnetic field (no toggling) and the ? count output ? will be low if the applied magnetic field b exceeds b on . the ? count output ? will be high if b drops below b off . the ? direc- tion output ? will have the correct state after the second edge (rising or falling) in the same direction. the device contains a power-on reset circuit (por) generating a reset when v dd rises. this signal is used to initialize both outputs in the ? off-state ? (i.e. output high) and to disable test mode. the generation of this reset signal is guaranteed when v dd at the chip rises to minimum 3.8 v in less than 4 s monotonically. if this condition is violated, the internal reset signal might be missing. under these circumstances the chip will still operate according to the specification, but the risk of toggling outputs during t en(o) increases and for mag- netic fields between b off and b on , the output states of the hall sensor after applying v dd will be either low or high. in order to achieve a well defined output state, the applied magnetic field then must exceed b onmax , respectively drop below b offmin .
all information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples deliv- ered. by this publication, micronas gmbh does not assume responsibil- ity for patent infringements or other rights of third parties which may result from its use. further, micronas gmbh reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. no part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of micronas gmbh. hal710 advance information 12 micronas micronas gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@micronas.com internet: www.micronas.com printed in germany order no. 6251-478-1ai 4.6. emc and esd for applications that cause disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see fig. 4 ? 1). the series resistor and the capacitor should be placed as closely as possible to the hall sensor. please contact micronas for detailed investigation reports with emc and esd results. fig. 4 ? 1: test circuit for emc investigations 5. data sheet history 1. advance information: ? hal710 hall-effect sensor with direction detection ? , feb. 20, 2001, 6251-478-1ai. first release of the advance informa- tion. 1 v dd 4gnd 3 count output 2 direction output r v 220 ? v emc v p 4.7 nf r l 2.4 k ? 20 pf r l 2.4 k ? 20 pf

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